JPH0339585B2 - - Google Patents
Info
- Publication number
- JPH0339585B2 JPH0339585B2 JP58100683A JP10068383A JPH0339585B2 JP H0339585 B2 JPH0339585 B2 JP H0339585B2 JP 58100683 A JP58100683 A JP 58100683A JP 10068383 A JP10068383 A JP 10068383A JP H0339585 B2 JPH0339585 B2 JP H0339585B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- insulating film
- semiconductor region
- semiconductor
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 59
- 150000002500 ions Chemical class 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 18
- 230000001681 protective effect Effects 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58100683A JPS59225344A (ja) | 1983-06-06 | 1983-06-06 | イオンセンサ−用絶縁ゲ−ト電界効果トランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58100683A JPS59225344A (ja) | 1983-06-06 | 1983-06-06 | イオンセンサ−用絶縁ゲ−ト電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59225344A JPS59225344A (ja) | 1984-12-18 |
JPH0339585B2 true JPH0339585B2 (en]) | 1991-06-14 |
Family
ID=14280538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58100683A Granted JPS59225344A (ja) | 1983-06-06 | 1983-06-06 | イオンセンサ−用絶縁ゲ−ト電界効果トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59225344A (en]) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006095903A1 (ja) * | 2005-03-11 | 2006-09-14 | National University Corporation Toyohashi University Of Technology | 累積型化学・物理現象検出装置 |
WO2007108465A1 (ja) * | 2006-03-20 | 2007-09-27 | National University Corporation Toyohashi University Of Technology | 累積型化学・物理現象検出方法及びその装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0725688Y2 (ja) * | 1985-12-18 | 1995-06-07 | 新電元工業株式会社 | 半導体イオンセンサ |
JPS62144059A (ja) * | 1985-12-18 | 1987-06-27 | Shindengen Electric Mfg Co Ltd | イオンセンサ |
-
1983
- 1983-06-06 JP JP58100683A patent/JPS59225344A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006095903A1 (ja) * | 2005-03-11 | 2006-09-14 | National University Corporation Toyohashi University Of Technology | 累積型化学・物理現象検出装置 |
WO2007108465A1 (ja) * | 2006-03-20 | 2007-09-27 | National University Corporation Toyohashi University Of Technology | 累積型化学・物理現象検出方法及びその装置 |
JP2013174602A (ja) * | 2006-03-20 | 2013-09-05 | Toyohashi Univ Of Technology | 累積型化学・物理現象検出装置及びその制御方法 |
JP5335415B2 (ja) * | 2006-03-20 | 2013-11-06 | 国立大学法人豊橋技術科学大学 | 累積型化学・物理現象検出方法及びその装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS59225344A (ja) | 1984-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2610294B2 (ja) | 化学センサ | |
US4791465A (en) | Field effect transistor type semiconductor sensor and method of manufacturing the same | |
US20040164330A1 (en) | SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof | |
US4232326A (en) | Chemically sensitive field effect transistor having electrode connections | |
US7211459B2 (en) | Fabrication method of an ion sensitive field effect transistor | |
JPH0339585B2 (en]) | ||
EP0211609A2 (en) | Chemically sensitive semiconductor devices and their production | |
JPH0426432B2 (en]) | ||
JPH0315974B2 (en]) | ||
CA1250020A (en) | Ambient sensing devices with isolation | |
JPH03208375A (ja) | 半導体圧力センサ | |
JPS63195557A (ja) | イオンセンサ用電界効果トランジスタ | |
JPS61153537A (ja) | 半導体圧力センサ | |
JPS59100851A (ja) | 半導体イオンセンサ | |
JPH0725688Y2 (ja) | 半導体イオンセンサ | |
JPS62135760A (ja) | 半導体イオンセンサの製造方法 | |
JPS60209162A (ja) | 化学感応電界効果トランジスタおよびその製造方法 | |
JP2988020B2 (ja) | 半導体イオンセンサ | |
JPH0320768Y2 (en]) | ||
JPS6398156A (ja) | 半導体圧力センサの製造方法 | |
JPS62267656A (ja) | 半導体イオンセンサの製造方法 | |
JPH0656377B2 (ja) | イオン検出器 | |
JPS60202343A (ja) | 相補型半導体湿度センサ | |
JPS5848840A (ja) | 電気抵抗式湿度センサ及びその製造方法 | |
JPS6082846A (ja) | 電界効果型半導体センサ |